Hybrid fin cut with improved fin profiles

A method comprising:

• forming fin hardmask structures in a first region, a second region and a third region;
• removing selected ones of the fin hardmask structures in the first region, the second region and the third region, with remaining hardmask fin structures covering an area of active fin structure formation;
• forming a masking material covering an area of dummy fin structure formation in the third region;
• patterning active fin structures using remaining fin hardmask structures as a mask in the first region, the second region and the third region, and dummy fin structures using the masking material in the third region;
• removing the dummy fin structures;
• and
• forming shallow trench isolation regions between the active fin structures.

A method comprising:

• forming a plurality of hardmask fin structures in a first region, a second region and a third region of a semiconductor chip;
• forming a first masking material over the plurality of hardmask fin structures in the first region, the second region and the third region;
• forming trenches in the first masking material to expose selected hardmask fin structures of the plurality of hardmask fin structures in the first region, the second region and the third region;
• forming a second masking material in the trenches to cover the exposed selected hardmask fin structures in the first region, the second region and the third region;
• partially removing the second masking material in the third region to expose adjacent hardmask fin structures of the selected hardmask fin structures in the third region;
• removing the exposed adjacent hardmask fin structures in the third region to form spaces;
• forming a third masking material in the spaces in the third region;
• removing the second masking material in the first region and the second region and remaining portions of the second masking material in the third region to expose the selected hardmask fin structures remaining in the first region, the second region and the third region;
• removing the selected hardmask fin structures which were remaining in the first region, the second region and the third region;
• removing the first masking material and forming fin structures in the first region, the second region and the third region corresponding to the locations which include the hardmask fin structures and the third masking material;
• and
• removing unwanted fin structures which are masked with the third material in the third region to create a region of less density compared to the first region and the second region.