Method for forming replacement metal gate and related structures

An integrated circuit (IC) structure comprising:

• a substrate;
• a first fin and a second fin, the first and second fins being positioned over the substrate and laterally separated from one another;
• a replacement metal gate structure including a first gate structure surrounding sidewalls of the first fin and a second gate structure surrounding sidewalls of the second fin;
• and
• a first dielectric region positioned above the substrate and separating a lower portion of the first gate structure from a lower portion of the adjacent second gate structure, wherein an upper surface of the first dielectric region is positioned below an upper surface of the first gate structure and below an upper surface of the second gate structure, and wherein the replacement metal gate structure further includes a portion positioned on top of the first dielectric region.

An integrated circuit (IC) structure comprising:

• a substrate;
• a first fin, a second fin and a third fin, the first, second and third fins being positioned over the substrate such that the first fin is laterally separated from the second fin and the third fin is laterally separated from the second fin;
• a replacement metal gate structure including a first gate structure surrounding sidewalls of the first fin, a second gate structure surrounding sidewalls of the second fin and a third gate structure surrounding sidewalls of the third fin;
• and
• a first dielectric region positioned above the substrate and separating a lower portion of the first gate structure from a lower portion of the adjacent second gate structure, wherein an upper surface of the first dielectric region is positioned below an upper surface of the first gate structure, below an upper surface of the second gate structure and below an upper surface of the third gate structure, and wherein the replacement metal gate structure further includes a portion positioned on top of the first dielectric region.