US 2019/0378757 A1 · MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Abstract

A manufacturing method of a semiconductor device including the following steps is provided. A substrate having a device structure and a first interconnection structure on a front side is provided. A first annealing process is performed in an atmosphere of pure hydrogen at a first temperature. A second interconnection structure is formed on a back side of the substrate. A second annealing process is performed in an atmosphere of gas mixture including hydrogen at a second temperature.

Claims15

Dependent claims

A manufacturing method of a semiconductor device, comprising:

providing a substrate having a device structure and a first interconnection structure on a front side;
performing a first annealing process in an atmosphere of pure hydrogen at a first temperature;
forming a second interconnection structure on a back side of the substrate;
and
performing a second annealing process in an atmosphere of gas mixture comprising hydrogen at a second temperature, after the performing the first annealing process.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/006,739Filed 12 Jun 2018

Published

12 Dec 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10W 20/023
Of interconnections within wafers or substrates: the interconnections being through-semiconductor vias
H10W 20/056
Of conductive parts of the interconnections: by filling conductive material into holes, grooves or trenches
H10D 30/0323
Comprising silicon, e.g. amorphous silicon or polysilicon: comprising monocrystalline silicon
H10D 30/6734
Multi-gate TFTs: having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Manufacturing method of semiconductor device

Life of this patent

Manufacturing method of semiconductor device

Life of this patent

Abstract

Claims15