Doping control of metal nitride films
AssigneeApplied Materials, Inc.
InventorsAnnamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
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Abstract
Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
Claims20
A method for depositing a doped metal nitride film on a substrate, the method comprising:
- depositing a metal nitride film on the substrate at a temperature selected to provide a film having a predetermined film density;
- and
- exposing the metal nitride film to a dopant metal precursor to form a doped metal nitride film.
A method for controlling doping of a metal nitride film, the method comprising:
- controlling temperature during deposition of a metal nitride film to control density of the metal nitride film;
- and
- exposing the metal nitride film to a dopant metal precursor to form a doped metal nitride film.
A method for depositing a barrier film, the method comprising:
- depositing a metal nitride film on a dielectric film on a substrate surface, wherein temperature during deposition of the metal nitride film is controlled to control density of the metal nitride film;
- doping the metal nitride film with one or more dopants;
- and
- diffusing one or more of the dopants through the metal nitride film to the dielectric film.
Dependencies are inferred from the claim text.