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US 2019/0378751 A1Published application
Finfet device comprising a single diffusion break with an upper surface that is substantially coplanar with an upper surface of a fin
AssigneeGlobalfoundries Inc.
InventorsJiehui Shu, Hong Yu, Jinping Liu, Hui Zang
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Abstract
A finFET device is disclosed including a fin defined in a semiconductor substrate, the fin having an upper surface and a first diffusion break positioned in the fin, wherein the first diffusion break comprises an upper surface that is substantially coplanar with the upper surface of the fin.
Claims7
A device, comprising:
- a fin defined in a semiconductor substrate, said fin having an upper surface;
- and
- a first diffusion break positioned in said fin, said first diffusion break comprising a dielectric material and an upper surface that is substantially coplanar with said upper surface of said fin.
A device, comprising:
- a fin defined in a semiconductor substrate, said fin having an upper surface;
- a first diffusion break positioned in said fin, said first diffusion comprising a dielectric material and an upper surface that is substantially coplanar with said upper surface of said fin;
- and
- a second diffusion break positioned in said fin, said second diffusion break comprising a dielectric material, wherein said second diffusion break has an upper surface that is recessed with respect to said upper surface of said fin.
1 more element
Dependencies are inferred from the claim text.