Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same
AssigneeFurukawa Electric Co., Ltd.
InventorsAkira AKUTSU, Tomoaki UCHIYAMA
Life of this patent
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Abstract
A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.
Claims12
A mask-integrated surface protective tape, comprising a substrate film and a mask material layer,
- wherein the mask material layer is attached directly to the substrate film, or is attached to the substrate film through a temporary-adhesive layer interposed therebetween, and
- wherein a parallel ray transmittance of the mask material layer at a wavelength of 355 nm is 30% or less.
A method of separating a semiconductor wafer into a plurality semiconductor chips using a mask-integrated surface protective tape that includes a mask material layer and a substrate film, wherein the mask material layer is attached directly to the substrate film, or is attached to the substrate film through a temporary-adhesive layer interposed therebetween, the method comprising:
- laminating the mask-integrated surface protective tape on a patterned top surface of a semiconductor wafer with the mask material layer in direct contact with the patterned top surface of the semiconductor wafer;
- grinding a bottom surface of the semiconductor wafer that is opposite to the patterned surface to thin the semiconductor wafer from a bottom thereof while protecting the patterned top surface by the laminated mask-integrated surface protective tape;
- laminating a wafer-fixing tape on the ground bottom surface of the semiconductor wafer;
- thereafter, attaching the wafer-fixing tape to a frame so as to support the ground semiconductor wafer via the frame;
- thereafter, peeling off the substrate film, or the substrate film and the temporary-adhesive layer, from the mask-integrated surface protective tape so as to expose a surface of the mask material layer;
- radiating a laser beam along prescribed dicing lines to the exposed surface of the mask material layer to laser-cut the mask material layer along the prescribed dicing lines, thereby patterning the mask material layer;
- thereafter, exposing the semiconductor wafer having the patterned mask material layer thereon to a plasma to perform a plasma dicing of the semiconductor wafer using the patterned mask material layer as a mask;
- removing the mask material layer;
- and
- separating the diced semiconductor wafer from the wafer-fixing tape so as to produce a plurality of separated semiconductor chips.
Dependencies are inferred from the claim text.