Processing method and plasma processing apparatus

A substrate processing method comprising:

• providing a substrate in a processing container;
• etching an opening in the substrate;
• after etching of the opening, selectively forming a first film on a selective region of a surface of the substrate disposed in the processing container by plasma enhanced chemical vapor deposition (PECVD), wherein the selective region of the surface where the first film is formed includes at least surface portions outside of said opening;
• and
• forming a second film by atomic layer deposition (ALD) on surface portions of the substrate where the first film does not exist, wherein the surface portions of the substrate where the first film does not exist include surface portions inside of said opening,
• wherein the method includes, during forming of the second film, forming a precursor layer on the surface portions inside of said opening, by supplying a gaseous precursor into the processing container, purging an interior of the processing container, and converting the precursor layer into the second film by exposing the precursor layer to plasma for modification of the precursor layer in the processing container, and the plasma for modification of the precursor layer reduces a film thickness of the first film.

A plasma processing apparatus comprising:

• a processing container which receives a substrate;
• and
• a controller configured to control a processing performed on the substrate in the processing container,
• wherein the controller includes a sequence performing unit which repeatedly performs a sequence including selectively forming a first film on a selective region of a surface of the substrate disposed in the processing container by using plasma enhanced chemical vapor deposition (PECVD), and forming a second film by atomic layer deposition (ALD) in a region of the surface where the first film does not exist.