Back to results
US 2019/0378724 A1Published application
Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorsSatoshi TODA, Satoru KIKUSHIMA, Ken NAKAGOMI, Yoshie OZAWA, Jun LIN
Life of this patent
Estimating the term…
Abstract
There is provided an etching method which includes: providing a substrate inside a chamber, the substrate including a silicon oxide-based material and other material, the silicon oxide-based material including an etching target portion having a width of 10 nm or less and an aspect ratio of 10 or more; and selectively etching the etching target portion with respect to the other material by supplying an HF gas and an OH-containing gas to the substrate.
Claims19
An etching method, comprising:
- providing a substrate inside a chamber, the substrate including a silicon oxide-based material and other material, the silicon oxide-based material including an etching target portion having a width of 10 nm or less and an aspect ratio of 10 or more;
- and
- selectively etching the etching target portion with respect to the other material by supplying an HF gas and an OH-containing gas to the substrate.
An etching method, comprising:
- providing a substrate inside a chamber, the substrate including a first SiOCN material and a second SiOCN material with a higher concentration of C than the first SiOCN material;
- and
- selectively etching the first SiOCN material with respect to the second SiOCN material by supplying an HF gas and an OH-containing gas to the substrate inside the chamber.
An etching apparatus, comprising:
- a chamber in which a substrate is accommodated;
- a stage provided inside the chamber and configured to mount the substrate thereon;
- a temperature adjuster configured to adjust a temperature of the substrate mounted on the stage;
- a gas supply part configured to supply a gas including an etching gas to the chamber;
- an exhausting part configured to exhaust an interior of the chamber;
- and
- a controller configured to control the temperature adjuster, the gas supply part and the exhausting part.
4 more elements
Dependencies are inferred from the claim text.