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US 2019/0378723 A1Published application
Film forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsHideo Nakamura, Yosuke Serizawa, Yoshikazu Ideno, Hiroaki Ashizawa, Takaya Shimizu, Seishi Murakami
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Abstract
A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.
Claims20
A film forming method comprising:
- repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas;
- and
- supplying a hydrazine-based compound gas as a part or all of the nitriding gas.
A film forming method comprising:
- a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber, and purging a residual gas;
- a nitriding process including supplying NH3 gas as a nitriding gas on the substrate and purging a residual gas;
- and
- a process of supplying a hydrazine compound gas on the substrate,
- wherein the process of supplying the hydrazine compound gas is performed after repeatedly performing the source gas adsorption process and the nitriding process a plurality of times.
2 more elements
Dependencies are inferred from the claim text.