US 2019/0378714 A1Published application

Method for controlling plasma in semiconductor fabrication

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsCheng-Tsung WU, Po-Hsiung LEU, Ding-I LIU, Si-Wen LIAO, Hsiang-Sheng KUNG

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Abstract

A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Claims20

Dependent claims

A method for controlling a plasma in semiconductor fabrication, comprising:

generating the plasma by a remote plasma module;
providing a chamber connected to the remote plasma module by a line, wherein the chamber includes a first outer surface and a second outer surface and a first end surface and a second end surface opposing the first end surface;
directing the plasma from the remote plasma module through the line extending into the chamber through a first inlet port disposed on the first end surface;
directing a first processing gas into the chamber through a second inlet port on the second outer surface and directing a second processing gas into the chamber through a third inlet port on the first outer surface, wherein the first processing gas is different than the second processing gas;
mixing the plasma with the first processing gas at a first point and the second processing gas at a second point in a flow path within a body of the chamber, wherein a distance interposes the first point and the second point, and wherein the second point is further from the first inlet port than the first point by the distance;
prior to the mixing, acquiring a parameter data of the plasma while in the chamber wherein the acquiring is performed through a window in the second outer surface;
after acquiring the parameter data, passing the mixed plasma, first processing gas, and second processing gas out of the chamber through an outlet port in the second end surface;
and
comparing the parameter data to a preset parameter specification.

6 more elements

A method for controlling plasma use in semiconductor fabrication, comprising:

generating a plasma using a plasma source gas of a first composition;
directing the generated plasma into a compound mixing member wherein the generated plasma enters the compound mixing member through a first inlet port in the compound mixing member and follows a first flow path within the compound mixing member;
directing a first processing gas into the compound mixing member, the first processing gas entering the compound mixing member through a second inlet port in the compound mixing member, the second inlet port different from the first inlet port and wherein the first processing gas follows a second flow path in the compound mixing member separate and different from the first flow path;
directing a second processing gas into the compound mixing member, the second processing gas entering the compound mixing member through a third inlet port in the compound mixing member, the third inlet port different from the first and second inlet ports and wherein the second processing gas follows a third flow path in the compound mixing member separate and different from the first flow path and wherein the second processing gas is different than the first processing gas;
providing a detection module having a spectrophotometer and a computer, wherein the spectrophotometer is physically disposed on a first wall of the compound mixing member that is perpendicular a second wall including the first inlet port and is disposed between the first inlet port and the second inlet port, wherein the spectrophotometer physically is disposed on the first wall and includes a sealing member between the spectrophotometer and a window in the compound mixing member;
measuring to acquire a parameter data of the generated plasma in the compound mixing member using the spectrophotometer by measuring the generated plasma through the window, wherein the generated plasma is measured in the first flow path after the generated plasma passes through the first inlet port;
after the measuring, mixing the generated plasma and the first processing gas into a fourth flow path within the compound mixing member;
after mixing the generated plasma and the first processing gas, mixing the generated plasma and first processing gas with the second processing gas;
and
comparing the parameter data to a preset parameter specification.

7 more elements

A method for controlling plasma use in semiconductor fabrication, comprising:

generating a plasma using a plasma source gas of a first composition;
directing the generated plasma into a compound mixing member wherein the generated plasma enters the compound mixing member through a first inlet port in the compound mixing member and follows a first flow path within the compound mixing member;
directing a first processing gas into the compound mixing member, the first processing gas entering the compound mixing member through a second inlet port in the compound mixing member, the second inlet port different from the first inlet port;
directing a second processing gas into the compound mixing member, the second processing gas entering the compound mixing member through a third inlet port in the compound mixing member, the third inlet port different from the first and second inlet ports, wherein the second processing gas is different than the first processing gas;
providing a detection module having a spectrophotometer and a computer;
measuring to acquire a parameter data of the generated plasma in the compound mixing member using the spectrophotometer by measuring the generated plasma through a window, wherein the generated plasma is measured in the first flow path after the generated plasma passes through the first inlet port;
after the measuring, mixing the generated plasma and the first processing gas;
after mixing the generated plasma and the first processing gas, mixing the generated plasma and first processing gas with the second processing gas;
and
comparing the parameter data to a preset parameter specification.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/548,009Filed 22 Aug 2019
Priority: 22 May 2015
Published: 12 Dec 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 14/6336
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: in the presence of a plasma [PECVD]
H01J 37/32357
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources: generation remote from the…
H01J 37/3244
Constructional details of the reactor: gas supply means
H01J 37/32449
Gas supply means: gas control, e.g. control of the gas flow

Family

Application62/165,477Us provisional application · filed 22 May 2015
Application14/836,574Continuation · filed 26 Aug 2015
Application16/548,009Continuation
US 10,395,918 B2Related patent
US 10,867,787 B2Related patent
US 2016/0343625 A1Published application
US 2019/0378714 A1This patent

From the US filing history. Foreign family members aren’t listed.

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