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US 2019/0378710 A1Published application
Ultrathin atomic layer deposition film accuracy thickness control
AssigneeLam Research Corporation
InventorsJun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Abstract
Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.
Claims12
1-35. (canceled)
A method of depositing a silicon-containing film on a substrate, the method comprising:
- providing the substrate;
- exposing the substrate to a silicon-containing precursor selected from the group consisting of cyclic siloxanes;
- exposing the substrate to a reactant to react with the silicon-containing precursor and form at least a portion of a silicon-containing film;
- and
- alternating between exposing of the substrate to the silicon-containing precursor and the exposing of the substrate to the reactant in cycles until a desired thickness of the silicon-containing film is deposited,
- wherein the exposing of the substrate to the silicon-containing precursor and exposing of the substrate to the reactant is performed at a temperature greater than about 400° C.
3 more elements
Dependencies are inferred from the claim text.