Deposition of boron and carbon containing materials
AssigneeASM IP Holding B.V.
InventorViljami Pore
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Abstract
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.
Claims20
A method of depositing a BxC film on a three-dimensional structure on a substrate in a reaction space, comprising:
- contacting the three-dimensional structure on the substrate with a vapor phase boron precursor in a carrier gas at a substrate surface temperature of up to 400° C. such that the boron precursor decomposes on the three-dimensional structure to form the BxC film, wherein x is 0.1 to 25, and wherein the BxC film has an etch rate in a solution comprising hydrofluoric acid of less than 0.2 nm/min.
A method of forming an etch stop layer on a three-dimensional feature on a substrate, comprising:
- contacting the three-dimensional feature with a vapor phase boron precursor at a substrate surface temperature of up to 400° C. such that the boron precursor decomposes on the substrate, wherein the etch stop layer layer comprises BxC, where x is from 0.1 to 25, and wherein a film density of the BxC-film is from 2.0 g/cm3 to 2.5 g/cm3.
Dependencies are inferred from the claim text.