Ion implantation apparatus and ion implantation method
AssigneeElectronics and Telecommunications Research Institute
InventorsMoon Youn JUNG, Won Bae CHO
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Abstract
Provided is an ion implantation method. An ion implantation method according to an embodiment of the inventive concept may include providing a host material and a target into a chamber, the target comprising a first material; irradiating the target with a laser to generate an ion beam; and irradiating the host material with the ion beam to dope the host material with the first material, wherein while the host material is irradiated with the ion beam, the host material is rotated.
Claims18
An ion implantation method comprising:
- providing a host material and a target into a chamber, the target comprising a first material;
- irradiating the target with a laser to generate an ion beam;
- and
- irradiating the host material with the ion beam to dope the host material with the first material, wherein
- while the host material is irradiated with the ion beam, the host material is rotated.
An ion implantation method comprising:
- providing a host material and a target into a chamber, the target comprising a first material;
- irradiating the target with a laser to generate an ion beam, the ion beam comprising first particles and second particles and the first particles having energy at least about 10 MeV higher than the second particles;
- and
- irradiating the host material with the ion beam to dope the host material with the first material.
An ion implantation apparatus comprising:
- a chamber;
- a light source part configured to output a laser into a chamber;
- a target part configured to output an ion beam by receiving the laser;
- and
- a support part disposed inside the chamber and configured to support a host material so that the host material is irradiated with the ion beam, wherein
- the support part rotates the host material while the host material is irradiated with the ion beam.
Dependencies are inferred from the claim text.