Boosted channel programming of memory
AssigneeMicron Technology, Inc.
InventorsMark A. Helm, Kalyan C. Kavalipurapu
Life of this patent
Estimating the term…
Abstract
Methods of operating a memory include boosting a channel voltage of a memory cell selected for programming to a particular voltage level for a particular programming pulse, boosting the channel voltage of the memory cell selected for programming to a second voltage level, greater than the particular voltage level, for a subsequent programming pulse, and boosting the channel voltage of the memory cell selected for programming to a third voltage level, greater than the second voltage level, for a next subsequent programming pulse.
Claims23
A method of operating a memory, comprising:
- boosting a channel voltage of a memory cell selected for programming to a particular voltage level for a particular programming pulse;
- boosting the channel voltage of the memory cell selected for programming to a second voltage level, greater than the particular voltage level, for a subsequent programming pulse;
- and
- boosting the channel voltage of the memory cell selected for programming to a third voltage level, greater than the second voltage level, for a next subsequent programming pulse.
A method of operating a memory, comprising:
- boosting a channel voltage of a first memory cell selected for programming to a first voltage level for a particular programming pulse, and boosting a channel voltage of a second memory cell selected for programming to a second voltage level for the particular programming pulse;
- boosting the channel voltage of the first memory cell selected for programming to a third voltage level, greater than the first voltage level, for a subsequent programming pulse, and boosting the channel voltage of the second memory cell selected for programming to a fourth voltage level, greater than the second voltage level, for the subsequent programming pulse;
- and
- boosting the channel voltage of the first memory cell selected for programming to a fifth voltage level, greater than the third voltage level, for a next subsequent programming pulse, and boosting the channel voltage of the second memory cell selected for programming to a sixth voltage level, greater than the fourth voltage level, for the next subsequent programming pulse;
- wherein the sixth voltage level is greater than the fifth voltage level;
- wherein a difference between the third voltage level and the first voltage level is the same as a difference between the fifth voltage level and the third voltage level;
- wherein a difference between the fourth voltage level and the second voltage level is the same as a difference between the sixth voltage level and the fourth voltage level;
- and
- wherein the second memory cell is selected for programming to a data state corresponding to a range of threshold voltages less than a range of threshold voltages corresponding to a data state to which the first memory cell is selected for programming.
A method of operating a memory, comprising:
- boosting a channel voltage of a first memory cell selected for programming to a first voltage level for a particular programming pulse, and boosting a channel voltage of a second memory cell not selected for programming to a second voltage level greater than the first voltage level;
- boosting the channel voltage of the first memory cell to a third voltage level, greater than the first voltage level, and boosting the channel voltage of the second memory cell to a fourth voltage level, greater than the third voltage level, for a subsequent programming pulse;
- and
- boosting the channel voltage of the first memory cell to a fifth voltage level, greater than the third voltage level, and boosting the channel voltage of the second memory cell to a sixth voltage level, greater than the fifth voltage level, for a next subsequent programming pulse.
Dependencies are inferred from the claim text.