Power-Efficient Programming of Magnetic Memory

A method for programming a memory cell that includes a two-terminal selector and a memory element coupled in series between a first conductive line and a second conductive line, the method including the steps of:

• applying a voltage across the memory cell, the voltage being sufficiently high to enable switching of the memory element from an initial resistance state to a target resistance state;
• determining the initial resistance state of the memory element;
• comparing the initial resistance state with the target resistance state;
• if the initial resistance state and the target resistance state are same, concluding that the memory element is already in the target resistance state and terminating programming process;
• and
• if the initial resistance state and the target resistance state are different, continually monitoring the voltage until a change in the voltage is detected and then concluding that the memory element has switched to the target resistance state and terminating the programming process,
• wherein the step of determining the initial resistance state of the memory element is carried out by a first sense amplifier and the step of continually monitoring the voltage is carried out by a second sense amplifier.