Memory management method, memory control circuit unit and memory storage apparatus

A memory control circuit unit for a rewritable non-volatile memory module comprising a plurality of super physical units, the plurality of super physical units at least comprising a plurality of good super physical units and a plurality of partial good super physical units, wherein each of the good super physical units comprises a plurality of good physical erasing units, each of the partial good super physical units comprises at least one bad physical erasing unit, and the memory control circuit unit comprises:

• a host interface, configured to couple to a host system;
• a memory interface, configured to couple to the rewritable non-volatile memory module;
• and
• a memory management circuit, coupled to the host interface and the memory interface;
• wherein the memory management circuit is configured to receive a host write command, and the memory management circuit is configured to select a first super physical unit set from the plurality of super physical units according to a number rate of the plurality of good super physical units and the plurality of partial good super physical units in the rewritable non-volatile memory module, wherein the first super physical unit set comprises a plurality of first good super physical units and at least one first partial good super physical unit selected from the plurality of super physical units according to the number rate,
• wherein the memory management circuit is further configured to write data corresponding to the host write command into the good physical erasing units of the first super physical unit set, in response to the host write command.

A memory storage apparatus, comprising:

• a connection interface unit, configured to couple to a host system;
• a rewritable non-volatile memory module, comprising a plurality of super physical units, the plurality of super physical units at least comprising a plurality of good super physical units and a plurality of partial good super physical units, wherein each of the good super physical units comprises a plurality of good physical erasing units, and each of the partial good super physical units comprises at least one bad physical erasing unit;
• and
• a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured to receive a host write command, and the memory control circuit unit is configured to select a first super physical unit set from the plurality of super physical units according to a number rate of the plurality of good super physical units and the plurality of partial good super physical units in the rewritable non-volatile memory module, wherein the first super physical unit set comprises a plurality of first good super physical units and at least one first partial good super physical unit selected from the plurality of super physical units according to the number rate,
• wherein the memory control circuit unit is configured to write data corresponding to the host write command into the good physical erasing units of the first super physical unit set, in response to the host write command.