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US 2019/0377263 A1Published application
A lithography composition, a method for forming resist patterns and a method for making semiconductor devices
AssigneeRidgefield Acquisition
InventorsKazuma YAMAMOTO, Maki ISHII, Tomoyasu YASHIMA, Tatsuro NAGAHARA
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Abstract
The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.
Claims15
-14. (canceled)
A lithography composition comprising a lithography material, water and a surfactant represented by below formula (I),
- wherein a is 1, 2, 3, 4 or 5,
- b and c are integer, b+c=2a+1, b is on or more than 1,
- d is 0, 1 or 2,
- e is 0 or 1,
- each X is independently represented by below formula (II),
- —O—CFR1— formula (II),
- R1 is —F, —CF3, —CF2H, —CFH2 or —CH3,
- Y is —COOH, —SO3H or an amide group represented by below formula (III),
- n is 0, 1 or 2,
- L1 is represented by below formula (IV),
- f is 0 or 1, and
- g is 0, 1, 2 or 3.
9 more elements
Dependencies are inferred from the claim text.