Active matrix substrate and method for manufacturing the same

A method for manufacturing an active matrix substrate, comprising:

• forming gate lines and gate electrodes of switching elements in a first wiring layer;
• forming a gate insulating film and a semiconductor film;
• forming a pixel electrode layer by forming pixel electrodes and lower layer conductor parts of data lines in the pixel electrode layer using indium tin oxide;
• forming a source layer by forming upper layer conductor parts of the data lines and conduction electrodes of the switching elements in a second wiring layer using a metal material other than indium tin oxide and patterning the semiconductor film;
• forming a protective insulating film in a layer over the pixel electrode;
• and.
• forming a common electrode in a layer over the protective insulating film, wherein
• in forming the pixel electrode laver, the lower layer conductor part is formed. in a disconnected shape at a position of the switching element, and.
• in forming the source layer, the upper layer conductor part is formed in a continuous shape so as to overlap with the lower layer conductor part.