Device for temperature detection

A device for temperature detection comprising:

• a delay unit including an odd number of inverters coupled end to end;
• a switching transistor having a control electrode coupled to an output end of the delay unit, a first electrode coupled to an operating voltage node of the device, and a second electrode coupled to an input end of the delay unit;
• a first capacitor having a first end coupled to the input end of the delay unit, and a second end coupled to one of the first electrode of the switching transistor and a ground node of the device;
• and
• a temperature sensitive transistor having a control electrode coupled to a bias voltage end of the device, a first electrode coupled to the input end of the delay unit, and a second electrode coupled to the ground node of the device, wherein, an active area of a transistor of at least one of the inverters comprises a semiconductor material having an electron mobility between 0.1 cm2V−1 s−1 and 20 cm2V−1 s−1.