METHOD FOR FORMING Si-CONTAINING FILM
AssigneeL'Air Liquide, Societe Anonyme pour I'Etude et I'Exploitation des Precedes Georges Claude
InventorsNaoto NODA, Jean-Marc GIRARD, Ivan OSCHCHEPKOV, Guillaume DURIEUX
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Abstract
To provide a deposition process whereby a seamless Si-containing film having a small number of voids can be formed on a substrate having a fine trench at a lower temperature. A method for forming an Si-containing film forms an Si-containing film on a substrate by a chemical vapor deposition process, wherein the chemical vapor deposition process includes a step (a) that reacts a first feed gas having one or more Si—Si bonds in a chemical vapor deposition chamber in the presence of a Lewis base catalyst.
Claims20
A method for forming an Si-containing film that forms an Si-containing film on a substrate by a chemical vapor deposition process,
- the chemical vapor deposition process comprising a step (a) that reacts a first feed gas having one or more Si—Si bonds in a chemical vapor deposition chamber in the presence of a Lewis base catalyst.
Dependencies are inferred from the claim text.