Pecvd apparatus for in-situ deposition of film stacks

A plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, the apparatus comprising:

• a process station;
• a reactant feed fluidly coupled to the process station, the reactant feed configured to supply a particular reactant gas mixture to the process station during a particular film deposition phase;
• a plasma source configured to supply a plasma to the process station;
• and
• a controller configured to control the plasma source to:
• generate reactant radicals using the particular reactant gas mixture during the particular deposition phase, and
• sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase, wherein the different deposition phase deposits a material having a different composition from the material deposited in the particular film deposition phase.