Compositions and Methods Using Same for Deposition of Silicon-Containing Film

A method for depositing a silicon-containing film in a flowable chemical vapor deposition process, the method comprising:

• placing a substrate comprising a surface feature into a reactor which is at one or more temperatures ranging from −20° C. to about 100° C.;
• introducing into the reactor a composition comprising at least one compound having the formula RnSiR14-n wherein R is selected from a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group;
• R1 is selected from hydrogen, methane and a linear or branched C2 to C10 alkyl group;
• and n is a number selected from 0, 1, 2, and 3;
• providing a plasma source into the reactor to at least partially react the at least one compound to form a flowable liquid oligomer, wherein the flowable liquid oligomer at least partially fills at least a portion of the surface feature, and wherein the plasma source comprises both a remote plasma source and an in-situ plasma source operating in combination.