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US 2019/0375642 A1Published application
Method for producing polycrystalline silicon
AssigneeTokuyama Corporation
InventorYuichi INOUE
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Abstract
Provided is a method which not only prevents (i) accumulation of fine silicon powder in a separation device and a pipe which are provided in steps after passage of a filter and (ii) damage to a pump, but also reduces adhesion of a silane oligomer to the filter. A method, in accordance with an embodiment of the present invention, for producing polycrystalline silicon, includes: a silicon deposition step; a separation step; and a fine powder removal step of removing the fine silicon powder by passing a chlorosilane condensate through a filter.
Claims7
A method for producing polycrystalline silicon, comprising the steps of:
- a) depositing polycrystalline silicon by reacting a chlorosilane compound and hydrogen together;
- b) separating, into a chlorosilane condensate and a gas component, exhaust gas which is discharged through the step a), the chlorosilane condensate containing fine silicon powder;
- and
- c) removing the fine silicon powder by passing the chlorosilane condensate containing the fine silicon powder through a filter.
1 more element
Dependencies are inferred from the claim text.