Bulk acoustic wave resonator and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsSang Kee YOON, Nam Soo PARK, Hyung Jae PARK, Tae Kyung LEE, Moon Chul LEE
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Abstract
A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.
Claims18
A method of manufacturing a bulk acoustic wave resonator, comprising:
- forming a sacrificial layer on a substrate protection layer;
- forming a membrane layer on the substrate protection layer to cover the sacrificial layer;
- and
- forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas,
- wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range of 1.5 to 2.4.
A bulk acoustic wave resonator, comprising:
- a substrate;
- a substrate protection layer disposed on a top surface of the substrate;
- a membrane layer forming a cavity together with the substrate;
- a resonance part disposed on the membrane layer;
- and
- an inlet configured to connect the cavity to an external component,
- wherein either one or both of a thickness of the membrane layer and a thickness of the substrate protection layer increases as a distance from the inlet increases.
Dependencies are inferred from the claim text.