Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorNaoki SHIMIZU
Life of this patent
Estimating the term…
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AssigneeFuji Electric Co., Ltd.
InventorNaoki SHIMIZU
Estimating the term…
Power cycle life of an intelligent power module that includes an IGBT is estimated by an abnormality detection circuit(s) while a chip temperature detection circuit or a case temperature detection circuit is outputting a chip overheating warning signal or a case overheating warning signal. Once the estimated power cycle life has reached a prescribed value, the abnormality detection circuit outputs an abnormality detection signal to forcedly and permanently stop operation of a driver circuit that drives an IGBT. The abnormality detection circuit may include a prescribed period calculation circuit that calculates the duration of the warning signal, a prescribed count calculation circuit that calculates the number of times the warning signal has been generated, and/or a cumulative time calculation circuit that calculates that the cumulative duration of periods in which the warning signal has been generated so as to estimate the power cycle life of the intelligent power module.
A semiconductor device, comprising:
Dependencies are inferred from the claim text.