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US 2019/0356108 A1Published application
Method of manufacturing semiconductor laser element, and semiconductor laser device thereof and gas analyzer
AssigneeHoriba, Ltd.
InventorMakoto MATSUHAMA
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Abstract
In order to form a reflection film on a rear end facet of a waveguide more easily than conventional, by etching a laminated structure formed on a substrate, a plurality of waveguides segmented in a lattice shape are formed, and a reflection film is formed on a surface of each of the waveguides for reflecting light in each of the waveguides.
Claims9
A method of manufacturing a semiconductor laser element from a laminated structure formed on a substrate, comprising the steps of:
- etching the laminated structure to form a plurality of waveguides which are segmented in a lattice shape;
- and
- forming a reflection film on a surface of each of the waveguides for reflecting light in each of the waveguides.
A semiconductor laser device including a substrate and a semiconductor laser element provided on the substrate, wherein the semiconductor laser element comprising:
- a waveguide composed of a part of a laminated structure formed on the substrate;
- and
- a reflection film continuously and integrally formed on a side surface along a longitudinal direction of the waveguide and on an end facet intersecting the longitudinal direction, and reflecting the light within the waveguide.
Dependencies are inferred from the claim text.