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US 2019/0355904 A1Published application
Methods, apparatuses, and circuits for programming a memory device
AssigneeMicron Technology, Inc.
InventorsAndrea Redaelli, Agostino Pirovano, Umberto M. Meotto
Life of this patent
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Abstract
Subject matter described pertains to methods, apparatuses, and circuits for programming a memory device.
Claims21
(canceled)
An apparatus, comprising:
- a memory material comprising a programmable portion and extending in a sideways direction;
- a separation material positioned over the memory material and extending in the sideways direction;
- a conductive material positioned over the separation material and extending in the sideways direction;
- and
- a conductive path from the conductive material to the memory material through the separation material.
2 more elements
An apparatus, comprising:
- a conductor having a first edge and a second edge that is laterally offset from the first edge in a first direction;
- and
- a memory material positioned below the conductor and comprising a programmable portion that is laterally offset from the second edge of the conductor in the first direction.
A method, comprising:
- applying, for a first duration, a first voltage to a conductive material having a first edge and a second edge that is laterally offset from the first edge in a first direction;
- and
- applying, for the first duration based at least in part on applying the first voltage, a second voltage to a resistive material that is positioned below the conductive material, wherein, based at least in part on applying the first and second voltages:
- a temperature of a portion of the resistive material increases, and
- a programmable portion of a memory material positioned below the conductive material and directly above the portion of the resistive material melts based at least in part on the temperature of the portion of the resistive material increasing.
2 more elements
Dependencies are inferred from the claim text.