Method of cleaning a substrate processing apparatus and the substrate processing apparatus performing the method
AssigneeTokyo Electron Limited
InventorsTakuya KUBO, Song yun KANG, Keiichi SHIMODA, Tetsuya OHISHI
Life of this patent
Estimating the term…
Abstract
A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
Claims13
A method of cleaning a substrate processing apparatus that etches a film including a metal, the method comprising:
- (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas;
- and
- (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
A method of plasma processing, comprising:
- etching a film including a metal by an etching gas in a substrate processing apparatus;
- (a) providing an inert gas in the substrate processing apparatus, and removing a metal-containing deposition by plasma generated from the inert gas;
- and
- (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas in the substrate processing apparatus, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
An substrate processing apparatus, comprising:
- a processor that is configured to perform a method of cleaning a substrate processing apparatus that etches a film including a metal, the method comprising:
- (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas;
- and
- (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
Dependencies are inferred from the claim text.