Back to results
US 2019/0355900 A1Published application
Cryogenic oxidation of metal layer of magnetic-tunnel-junction (mtj) device
AssigneeSamsung Electronics Co., Ltd.
InventorsWHAN KYUN KIM, EUN SUN NOH, JOON MYOUNG LEE, WOO CHANG LIM, JUN HO JEONG
Life of this patent
Estimating the term…
Abstract
A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.
Claims21
A method of manufacturing a magnetic-tunnel-junction (MTJ) device, the method comprising:
- forming a free magnetic layer over a substrate;
- forming a metal layer over the free magnetic layer;
- and
- oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.
1 more element
21-30. (canceled)
Dependencies are inferred from the claim text.