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US 2019/0355898 A1Published application
Magnetoresistance effect element
AssigneeTDK Corporation
InventorKatsuyuki NAKADA
Life of this patent
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Abstract
A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element.
Claims9
A magnetoresistance effect element, comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element.
2 more elements
Dependencies are inferred from the claim text.