Semiconductor device with asymmetrical pinned magnets, and method of manufacture

A device, comprising:

• a semiconductor substrate;
• a free magnetic element on the semiconductor substrate;
• a first magnet on the semiconductor substrate near a first end of the free magnetic element, the first magnet having a first value of coercivity;
• and
• a second magnet on the semiconductor substrate near a second end of the free magnetic element, the second magnet having a second value of coercivity different from the first value of coercivity.

A device, comprising:

• a semiconductor substrate;
• a free magnetic element on the semiconductor substrate, the free magnetic element having a domain wall and having a first end and a second end;
• a tunneling barrier layer on the free magnet element;
• a first pinned magnetic layer on the tunneling barrier layer;
• a second pinned magnetic layer on the substrate adjacent the first end of the free magnetic element;
• and
• a third pinned magnetic layer on the semiconductor substrate adjacent the second end of the free magnetic element, the second and third pinned magnetic layers configured to stabilize the domain wall in the free magnet during operation of the device.