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US 2019/0355871 A1Published application
High-efficiency 1,000nm infrared light emitting diode, and manufacturing method thereof
AssigneeAuk Corp.
InventorHyung Joo LEE
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Abstract
The present invention relates to an infrared light emitting diode and a manufacturing method thereof, and more specifically, to a 1,000 nm infrared light emitting diode with improved light emitting efficiency through compensation of strain, and a manufacturing method thereof.
Claims10
An infrared light emitting diode comprising:
- an InxGa1-xAs quantum well layer (0.13≤x≤0.15) having compressive strain;
- a GaAs1-yPy quantum barrier layer (0.07≤y≤0.11) having tensile strain;
- and
- an active layer including a GaInP strain compensation barrier having compressive strain lower than that of the quantum barrier layer, and a GaAs buffer layer.
1 more element
Dependencies are inferred from the claim text.