Optoelectronic Semiconductor Device and Method for Producing an Optoelectronic Semiconductor Device

A method for producing an optoelectronic semiconductor device, the method comprising:

• providing a semiconductor body having a first region of a first conductivity type, an active region designed to emit electromagnetic radiation and a second region of a second conductivity type in a stacking direction, wherein an absorber layer structure is arranged on a side of the second region facing away from the active region;
• applying a first mask layer having at least one recess to a side of the absorber layer structure facing away from the semiconductor body;
• etching with at least one etching process thereby removing a material of the absorber layer structure and a material of the semiconductor body and forming at least one recess in the semiconductor body within the recess in the first mask layer;
• removing the first mask layer;
• and
• applying an electrical contact metallization to the side of the absorber layer structure facing away from the semiconductor body.

An optoelectronic semiconductor device comprising:

• a semiconductor body comprising a first region of a first conductivity type, an active region designed to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction;
• an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation;
• a radiation coupling-out region surrounding the electrical contact metallization at an edge side;
• and
• an absorber layer structure arranged between the electrical contact metallization and the second region,
• wherein the semiconductor body comprises a trench in the second region, and
• wherein the trench at least partially surrounds the radiation coupling-out region.