US 2019/0355867 A1 · ENGINEERED SUBSTRATE

Abstract

An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.

Claims19

Dependent claims

An engineered substrate comprising:

a seed layer made of a first semiconductor material for growth of a solar cell;
a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material;
a direct bonding interface etween the seed layer;
and the surface layer;
wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2;
and
wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, and a total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2.

4 more elements

Dependencies are inferred from the claim text.

Engineered substrate

Life of this patent

Engineered substrate

Life of this patent

Abstract

Claims19