FINFETS with Wrap-Around Silicide and Method Forming the Same

A device comprising:

• a first silicon strip;
• a first gate dielectric encircling the first silicon strip;
• a silicon germanium oxide layer overlapped by the first silicon strip and the first gate dielectric;
• a semiconductor region overlapped by the silicon germanium oxide layer;
• a gate electrode on the first gate dielectric;
• and
• source and drain regions connected to opposite ends of the first silicon strip.

A device comprising:

• a plurality of semiconductor strips, with higher ones of the plurality of semiconductor strips overlapping lower ones of the plurality of semiconductor strips;
• a plurality of gate dielectrics, each encircling one of the plurality of semiconductor strips, wherein the plurality of gate dielectrics are joined together;
• a gate electrode contacting the plurality of gate dielectrics;
• and
• a source/drain region connected to ends of the plurality of semiconductor strips.