Asymmetrical blocking bidirectional gallium nitride switch

A method of forming a high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising:

• forming a hetero-junction structure from a first semiconductor layer interfacing a second semiconductor layer having different band gaps to make a two dimensional gas (2DEG) at the hetero-junction structure;
• forming a first source/drain electrode and second source/drain electrode on a top surface and at two opposite ends of the hetero junction structure;
• and
• forming a gate on the top surface of the hetero junction structure with a distance from the first source/drain electrode represented by LGS1/D2 and a distance from the second source/drain electrode represented by LGS2/D1 wherein LGS1/D2 is different from LGS2/D1.

A method of forming a high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising:

• forming a hetero-junction structure from a first semiconductor layer interfacing a second semiconductor layer having different band gaps to make a two dimensional gas (2DEG) at the hetero-junction structure;
• forming a first source/drain electrode and second source/drain electrode on a top surface and at two opposite ends of the hetero-junction structure;
• forming a first field plate extending from the first source/drain electrode toward the second source/drain electrode and forming a second field plate extending from the second source/drain electrode toward the first source/drain electrode with the second field plate configured asymmetrically from the first field plate;
• forming a first gate underneath the first field plate and forming a second gate underneath the second field plate.