Group iii-nitride integrated front-end circuit
AssigneeIntel Corporation
InventorsHan Wui THEN, Sansaptak DASGUPTA, Marko RADOSAVLJEVIC
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Abstract
An apparatus, an integrated circuit die, and a method of fabricating a group III-nitride (III-N) integrated RF front-end circuit are disclosed. The apparatus includes a III-N integrated radio frequency (RF) front-end circuit that includes a semiconductor substrate, a plurality of functional blocks, each of the plurality of functional blocks comprising a III-N structure on the semiconductor substrate. The III-N integrated RF front-end circuit is to be coupled to an antenna.
Claims24
An apparatus comprising:
- a group III-nitride (III-N) integrated radio frequency (RF) front-end circuit comprising:
- a semiconductor substrate;
- a plurality of functional blocks, each of the plurality of functional blocks comprising a III-N structure on the semiconductor substrate, wherein the III-N integrated RF front-end circuit is to be coupled to an antenna.
An integrated circuit die comprising:
- a semiconductor substrate;
- a group III-nitride (III-N) structure above the semiconductor substrate;
- a source terminal and a drain terminal on the III-N structure;
- a polarization layer above the III-N structure between the source terminal and the drain terminal;
- and
- a gate terminal above the polarization layer.
A method of fabricating a group III-nitride (III-N) integrated radio frequency (RF) front-end circuit, the method comprising:
- forming a III-N structure above a semiconductor substrate;
- forming a polarization layer above the III-N structure;
- forming a source terminal and a drain terminal on the III-N structure, wherein the polarization layer is between the source terminal and the drain terminal;
- and
- forming a gate terminal above the polarization layer.
Dependencies are inferred from the claim text.