Power Semiconductor Device

A power semiconductor device, comprising:

• a semiconductor body having a front side coupled to a first load terminal structure and a backside coupled to a second load terminal structure;
• a front side structure arranged at the front side and at least partially included in the semiconductor body, the front side structure comprising a cell field having a plurality of IGBT cells which define a front side active region that is configured to conduct a load current between the first load terminal structure and the second load terminal structure in a conducting state of the power semiconductor device, the front side structure having:
• a recess defining a pad region for providing a contact pad at the front side;
• a third lateral edge portion extending alongside the pad region;
• a fourth lateral edge portion extending alongside the pad region;
• and a second corner portion that forms a transition between the third lateral edge portion and the fourth lateral edge portion;
• a drift region of a first conductivity type included in the semiconductor body and configured to carry the load current;
• and
• a backside emitter region arranged in the semiconductor body in contact with the second load terminal, the backside emitter region having a net dopant concentration that is higher than a net dopant concentration of the drift region,
• wherein, in a vertical projection, an overlap of the pad region and the backside emitter region laterally terminates at a third distance from the third lateral edge portion and/or the fourth lateral edge portion and at a fourth distance from the second corner portion, the fourth distance being larger than the third distance.