Ic product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures

An integrated circuit product formed above a semiconductor substrate, the product comprising:

• a first final gate structure having a first end surface;
• a second final gate structure having a second end surface;
• and
• an insulating gate separation structure positioned between said first and second final gate structures, said insulating gate separation structure comprising first and second side surfaces that are opposite one another, wherein said first end surface contacts said first side surface of said insulating gate separation structure and said second end surface contacts said second side surface of said insulating gate separation structure, and wherein said insulating gate separation structure has a stepped bottom surface with a substantially horizontally oriented bottom central surface that is surrounded by a substantially horizontally oriented recessed surface, wherein said substantially horizontally oriented bottom central surface is positioned a first level above said substrate and said substantially horizontally oriented recessed surface is positioned at a second level above said substrate, wherein said second level is greater than said first level.

An integrated circuit product formed above a semiconductor substrate, the product comprising:

• a first final gate structure having a first end surface;
• a second final gate structure having a second end surface;
• and
• an insulating gate separation structure positioned between said first and second end surfaces, wherein said insulating gate separation structure comprises:
• first and second side surfaces that are opposite one another, wherein said first end surface contacts said first side surface of said insulating gate separation structure and said second end surface contacts said second side surface of said insulating gate separation structure;
• an internal sidewall spacer and additional material positioned within said internal sidewall spacer;
• a stepped bottom surface with a substantially horizontally oriented bottom central surface that is surrounded by a substantially horizontally oriented recessed surface and a substantially vertically oriented transition surface that extends between said substantially horizontally oriented bottom central surface and said substantially horizontally oriented recessed surface, wherein said substantially horizontally oriented bottom central surface is positioned a first level above said substrate and said substantially horizontally oriented recessed surface is positioned at a second level above said substrate, wherein said second level is greater than said first level;
• and
• a silicon dioxide region positioned vertically below said substantially horizontally oriented recessed surface and adjacent said transition surface of said insulating gate separation structure.