US 2019/0355826 A1 · TRANSISTORS WITH TEMPERATURE COMPENSATING GATE STRUCTURES

Abstract

Techniques are disclosed for forming semiconductor integrated circuits including a channel region, a gate dielectric between the gate electrode and the channel region, a first layer between the gate dielectric and the gate electrode, the first layer comprising temperature compensation material. In addition, the integrate circuit includes a source region adjacent to the channel region, a source metal contact on the source region, a drain region adjacent to the channel region, and a drain metal contact on the drain region. The temperature compensation material has a temperature dependent band structure, work-function, or polarization that dynamically adjusts the threshold voltage of the transistor in response to increased operating temperature to maintain the off-state current Ioff stable or otherwise within an acceptable tolerance. The temperature compensation material may be used in conjunction with a work function material to help provide desired performance at lower or non-elevated temperatures.

Claims21

Dependent claims

A semiconductor integrated circuit, comprising:

a semiconductor region;
a gate electrode above the semiconductor region;
a gate dielectric between the gate electrode and the semiconductor region;
a layer between the gate dielectric and the gate electrode, the layer comprising temperature compensation material;
a source region adjacent to the semiconductor region;
a first contact on the source region and including metal;
a drain region adjacent to the semiconductor region;
and
a second contact on the drain region and including metal.

6 more elements

Dependencies are inferred from the claim text.

Transistors with temperature compensating gate structures

Life of this patent

Transistors with temperature compensating gate structures

Life of this patent

Abstract

Claims21