Vertical fet devices including a contact on protruding portions of a substrate

A vertical field-effect transistor (VFET) device comprising:

• a substrate comprising first, second, and third vertically protruding portions;
• a first isolation region between the first and second vertically protruding portions;
• a second isolation region between the second and third vertically protruding portions;
• and
• a contact on respective top surfaces and respective sidewalls of the first, second, and third vertically protruding portions.

A vertical field-effect transistor (VFET) device comprising:

• a substrate comprising first and second protruding portions;
• an isolation region between the first and second protruding portions;
• first and second silicide regions on the first and second protruding portions, respectively;
• and
• a contact extending continuously from a top portion of the first silicide region that is on a top surface of the first protruding portion to a top portion of the second silicide region that is on a top surface of the second protruding portion, wherein the contact comprises a portion that protrudes between the first and second protruding portions toward the isolation region.