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US 2019/0355819 A1Published application
Semiconductor Device with Silicon Carbide Body and Method of Manufacturing
AssigneeInfineon Technologies AG
InventorsRalf Siemieniec, Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu
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Abstract
A semiconductor device includes a gate electrode and a gate dielectric. The gate electrode extends from a first surface of a silicon carbide body into the silicon carbide body. The gate dielectric is between the gate electrode and the silicon carbide body. The gate electrode includes a metal structure and a semiconductor layer between the metal structure and the gate dielectric.
Claims20
A semiconductor device, comprising:
- a gate electrode extending from a first surface of a silicon carbide body into the silicon carbide body;
- and
- a gate dielectric between the gate electrode and the silicon carbide body, the gate electrode comprising a metal structure and a semiconductor layer between the metal structure and the gate dielectric.
A method of manufacturing a semiconductor device, the method comprising:
- providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench;
- and
- forming a gate electrode in the gate trench, the gate electrode comprising a metal structure and a semiconductor layer between the metal structure and the gate dielectric.
Dependencies are inferred from the claim text.