Silicon Carbide Semiconductor Component

A semiconductor component, comprising:

• an SiC semiconductor body;
• a first load terminal on a first surface of the SiC semiconductor body;
• a second load terminal on a second surface of the SiC semiconductor body opposite the first surface;
• a drift zone of a first conductivity type in the SiC semiconductor body;
• a first semiconductor area of a second conductivity type which is electrically connected to the first load terminal;
• and
• a second semiconductor area of the second conductivity type between at least part of the drift zone and the second surface,
• wherein a pn junction between the drift zone and the first semiconductor area defines a voltage blocking strength of the semiconductor component,
• wherein dopants in the second semiconductor area have deep defects, the energy gap of which from a closest band edge is more than 160 meV.