Semiconductor device having fins

A device comprising:

• a semiconductive substrate;
• a first semiconductive fin and a second semiconductive fin extending upwards from the semiconductive substrate;
• an isolation structure at least partially between the first semiconductive fin and the second semiconductive fin;
• and
• a first semiconductive raised portion extending upwards from the semiconductive substrate and buried under the isolation structure, wherein the first semiconductive fin has a first sidewall facing the first semiconductive raised portion, the first semiconductive raised portion has a first sidewall facing away from the first semiconductive fin, and the first sidewall of the first semiconductive raised portion is steeper than the first sidewall of the first semiconductive fin.

A device comprising:

• a semiconductive substrate;
• a first semiconductive fin and a second semiconductive fin extending upwards from the semiconductive substrate;
• an isolation structure at least partially between the first semiconductive fin and the second semiconductive fin;
• and
• a first semiconductive raised portion extending upwards from the semiconductive substrate and buried under the isolation structure, wherein the first semiconductive fin has a first sidewall facing away from the first semiconductive raised portion, the first semiconductive raised portion has a first sidewall facing the first semiconductive fin, and the first sidewall of the first semiconductive fin is steeper than the first sidewall of the first semiconductive raised portion.