Semiconductor device including device isolation layer

A semiconductor device comprising:

• a substrate having a cell region and a core/peripheral region;
• a first active region in the cell region of the substrate;
• a second active region separated by a first distance from the first active region in a direction parallel to a lower surface of the substrate;
• a third active region separated by a second distance from the first active region in a direction parallel to the lower surface of the substrate, the second distance being less than the first distance;
• a first device isolation layer that defines the first active region, the second active region, and the third active region;
• a fourth active region and a fifth active region separated from each other by a third distance in a direction parallel to the lower surface of the substrate in the core/peripheral region of the substrate, the third distance being greater than the first distance;
• and
• a second device isolation layer that defines the fourth active region and the fifth active region,
• wherein the first device isolation layer comprises a first insulating film that contacts the first active region, the second active region, and the third active region and a second insulating film surrounded by the first insulating film,
• the second insulating film between the first active region and the second active region,
• the second device isolation layer comprises a third insulating film that contacts the fourth active region and the fifth active region and a fourth insulating film that contacts the third insulating film and separated from the fourth active region and the fifth active region, and
• at least a portion of an upper surface of the second device isolation layer upwardly protrudes from the fourth active region and the fifth active region.

A semiconductor device comprising:

• a substrate having a cell region and a core/peripheral region;
• a first active region in the cell region of the substrate;
• a first device isolation layer that defines the first active region;
• a second active region in the core/peripheral region of the substrate;
• a second device isolation layer that defines the second active region;
• a gate insulating film on the second active region;
• and
• a gate structure arranged on the gate insulating film and extends on the second device isolation layer,
• wherein the first device isolation layer comprises a first insulating film that contacts the first active region and a second insulating film surrounded by the first insulating film,
• the second device isolation layer comprises a third insulating film that contacts the second active region, a fourth insulating film, sidewalls and a lower surface of which are surrounded by the third insulating film, and a capping insulating film covering an upper surface of the fourth insulating film,
• a height from a lower surface of the substrate to an upper end of the second device isolation layer in a first direction perpendicular to the lower surface of the substrate is greater than a height from the lower surface of the substrate to an upper end of the second active region in the first direction, and
• a height from the lower surface of the substrate to an upper end of the first active region in the first direction is greater than a height from the lower surface of the substrate to the upper end of the second active region in the first direction.