Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device

An integrated circuit device, comprising:

• a lower electrode and an upper electrode facing each other;
• a dielectric layer interposed between the lower electrode and the upper electrode;
• a lower interface layer interposed between the lower electrode and the dielectric layer and comprising a first metal;
• and
• an upper interface layer interposed between the dielectric layer and the upper electrode and comprising the first metal,
• wherein each of the lower interface layer and the upper interface layer comprises a plurality of interface layers having different oxygen contents.

An integrated circuit device, comprising:

• a dielectric layer formed on a substrate;
• a plurality of interface layers formed on the dielectric layer and comprising a first interface layer and a second interface layer having different oxygen contents;
• and
• an electrode formed on the plurality of interface layers.