Cross-point memory and methods for fabrication of same

A method, comprising:

• patterning a first conductive line extending in a first direction;
• forming a pillar of a memory cell stack on the first conductive line after patterning the first conductive line, the forming comprising:
• forming a memory cell material stack comprising a selector material and a storage material over the first conductive line;
• and
• patterning the memory cell material stack to form the pillar comprising a selector element and a storage element;
• patterning a second conductive line on the pillar after forming the pillar, the second conductive line extending in a second direction crossing the first direction;
• and
• forming a liner to contact a sidewall of the second conductive line and a sidewall of a third conductive line extending parallel to the second conductive line.

A method, comprising:

• providing a substrate;
• depositing a selector material and a storage material over the substrate;
• etching the selector material and the storage material to form a vertical pillar comprising a memory cell stack including a storage element and a selector element;
• surrounding a plurality of side surfaces of the vertical pillar with an insulating material;
• and
• patterning a conductive line after surrounding the plurality of side surfaces of the vertical pillar with the insulating material, wherein the conductive line at least partially overlaps a top surface of the vertical pillar.

A method, comprising:

• patterning a first conductive line extending in a first direction;
• forming a plurality of pillars of memory cell stacks on the first conductive line after patterning the first conductive line, the forming comprising:
• forming a memory cell material stack comprising a selector material and a storage material over the first conductive line;
• and
• patterning the memory cell material stack to form the plurality of pillars, wherein each pillar of the plurality of pillars comprises a selector element and a storage element;
• and
• patterning a plurality of second conductive lines extending in a second direction crossing the first direction, wherein each second conductive line of the plurality of second conductive lines is formed one of the plurality of pillars.