Pixel architectures for low power micro light-emitting diode displays

A method of fabricating a micro light emitting diode pixel structure, the method comprising:

• providing a first wafer having a plurality of conductive interconnect structures in a first dielectric layer thereon;
• providing a second wafer having a plurality of micro light emitting diode devices in a second dielectric thereon, wherein the plurality of micro light emitting diode devices comprises an orange micro light emitting diode device, a green micro light emitting diode device, and a blue micro light emitting diode device;
• coupling the first and second wafers to provide individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures;
• removing the second wafer;
• and
• forming a transparent conducting oxide layer on the plurality of micro light emitting diode devices and on the second dielectric layer.

A pixel element for a micro-light emitting diode (LED) display panel, the pixel element comprising:

• a blue color nanowire or nanopyramid LED above a nucleation layer above a substrate, the blue color nanowire LED comprising a first GaN core;
• a green color nanowire or nanopyramid LED above the nucleation layer above the substrate, the green color nanowire LED comprising a second GaN core;
• and
• an orange color nanowire or nanopyramid LED above the nucleation layer above the substrate, the orange color nanowire or nanopyramid LED comprising a third GaN core.