Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device
AssigneeMicron Technology, Inc.
InventorsSwarnal Borthakur, Marc Sulfridge
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AssigneeMicron Technology, Inc.
InventorsSwarnal Borthakur, Marc Sulfridge
Estimating the term…
Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
A method of manufacturing a microelectronic imager having a substrate, an imager sensor located at a first side of the substrate, integrated circuitry coupled to the image sensor, a redistribution structure, and a bond-pad at the first side of the substrate, the redistributon structure having (a) a through-substrate interconnect between the first side and a second side of the substrate and (b) a trace over the second side of the substrate, the method comprising:
Dependencies are inferred from the claim text.