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US 2019/0355776 A1Published application
Imaging device and imaging system
AssigneeCanon Kabushiki Kaisha
InventorsTakeshi Uchida, Jun Iba
Life of this patent
Estimating the term…
Abstract
An imaging device includes a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided, and a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided.
Claims18
An imaging device comprising:
- a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided;
- and
- a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided,
- wherein a plurality of compound semiconductor layers including a first compound semiconductor layer of a first conductivity type, a second compound semiconductor layer of a second conductivity type provided over the first compound semiconductor layer, and a third compound semiconductor layer of the first conductivity type provided over the second compound semiconductor layer is provided over the first substrate, and
- wherein a thickness of the second compound semiconductor layer is thicker than a thickness corresponding to a diffusion length of carriers of the first conductivity type in the second compound semiconductor layer.
2 more elements
(canceled)
An imaging device comprising:
- a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided;
- and
- a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided,
- wherein a plurality of compound semiconductor layers including a first compound semiconductor layer of a first conductivity type, a second compound semiconductor layer of a second conductivity type provided over the first compound semiconductor layer, and a third compound semiconductor layer of the first conductivity type provided over the second compound semiconductor layer is provided over the first substrate,
- wherein the second compound semiconductor layer includes an InP layer, and
- wherein a thickness of the second compound semiconductor layer is thicker than 5 μm.
3 more elements
An imaging device comprising:
- a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided;
- and
- a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided,
- wherein a plurality of compound semiconductor layers including a first compound semiconductor layer of a first conductivity type, a second compound semiconductor layer of a second conductivity type provided over the first compound semiconductor layer, and a third compound semiconductor layer of the first conductivity type provided over the second compound semiconductor layer is provided over the first substrate, and
- wherein the second compound semiconductor layer includes a blocking layer configured to suppress diffusion of minority carriers.
2 more elements
Dependencies are inferred from the claim text.